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dc.contributor.authorCheng, CMen_US
dc.contributor.authorChen, RHen_US
dc.date.accessioned2014-12-08T15:39:12Z-
dc.date.available2014-12-08T15:39:12Z-
dc.date.issued2004-05-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2004.02.004en_US
dc.identifier.urihttp://hdl.handle.net/11536/26790-
dc.description.abstractHigh aspect ratio microstructures are frequently made with the Lithographie, Galvanoformung, Abformung (LIGA) process. The success of this process depends critically on "deep" X-ray lithography (DXRL). This paper presents a variety of experimentally and analytically determined techniques for optimizing DXRL. These include methods for designing and fabricating high-quality X-ray masks. Methods for optimizing the exposure dosage and developing cycle are described. New methods for promoting resist adhesion and for avoiding resist film cracking are discussed. The influence of developer surface tension on the resist solvation process is quantified and new methods for controlling this surface tension are described. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectLIGAen_US
dc.subjectDXRLen_US
dc.subjecthigh aspect ratioen_US
dc.subjectexposure and developmenten_US
dc.subjectmicrostructureen_US
dc.titleKey issues in fabricating microstructures with high aspect ratios by using deep X-ray lithographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2004.02.004en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume71en_US
dc.citation.issue3-4en_US
dc.citation.spage335en_US
dc.citation.epage342en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000221218500015-
dc.citation.woscount7-
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