0.13-mu m low-kappa-Cu CMOS logic-based technology for 2.1-Gb high data rate read-channel

Abstract

High-performance analog/digital elements have been successfully fabricated bya 0.13-mum low-kappa-Cu logic-based mixed-signal CMOS process in a single chip to enable a 2.1-Gb/s read-channel for hard disk drives that is a record-high data rate supported by fully CMOS solution. The high-performance analog devices demonstrate superior drivability, matching, noise immunity, and reliability by a unique dual-gate oxide module to support the aggressive oxide thickness scaling and maintain promisingly good reliability in all aspects.