標題: | A distributed charge storage with GeO2 nanodots |
作者: | Chang, TC Yan, ST Hsu, CH Tang, MT Lee, JF Tai, YH Liu, PT Sze, SM 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 5-四月-2004 |
摘要: | In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3x10(11) cm(-2), respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to similar to0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. (C) 2004 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1697627 http://hdl.handle.net/11536/26879 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1697627 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 84 |
Issue: | 14 |
起始頁: | 2581 |
結束頁: | 2583 |
顯示於類別: | 期刊論文 |