High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

doi:10.1063/1.1682696

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DC Field	Value	Language
dc.contributor.author	Peng, YCS	en_US
dc.contributor.author	Wu, YS	en_US
dc.date.accessioned	2014-12-08T15:39:27Z	-
dc.date.available	2014-12-08T15:39:27Z	-
dc.date.issued	2004-03-15	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1682696	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26947	-
dc.description.abstract	High-power light-emitting diodes (LEDs) fabricated on Cu substrates were investigated in this study. The AlGaInP LED structure was bonded to a Cu substrate by using indium-tin-oxide as the diffusion barrier layer. It was found that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA, which was eight times higher than that used in traditional GaAs-substrate LEDs. The luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which was three times higher than that of the GaAs-substrate LEDs. (C) 2004 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1682696	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	84	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1841	en_US
dc.citation.epage	1843	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000220182600009	-
dc.citation.woscount	9	-
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