标题: Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics
作者: Wang, JC
Shie, DC
Lei, TF
Lee, CL
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 1-三月-2004
摘要: The capacitance-voltage (C-V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors with different sweep voltage were investigated. It was found that, for the p-type substrate MOS capacitor, the C-V hysterisis has a turnaround characteristic as the applied voltage exceeds -3.0 V. The phenomenon is explained by electron trappings at the low electric field and hole trappings, which resulted from the impact ionization, at the high electric field in the dielectrics. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1644616
http://hdl.handle.net/11536/26960
ISSN: 0003-6951
DOI: 10.1063/1.1644616
期刊: APPLIED PHYSICS LETTERS
Volume: 84
Issue: 9
起始页: 1531
结束页: 1533
显示于类别:Articles


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