完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsu, CHen_US
dc.contributor.authorLo, HCen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorWu, CTen_US
dc.contributor.authorHwang, JSen_US
dc.contributor.authorDas, Den_US
dc.contributor.authorTsai, Jen_US
dc.contributor.authorChen, LCen_US
dc.contributor.authorChen, KHen_US
dc.date.accessioned2014-12-08T15:39:31Z-
dc.date.available2014-12-08T15:39:31Z-
dc.date.issued2004-03-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl049925ten_US
dc.identifier.urihttp://hdl.handle.net/11536/26980-
dc.description.abstractWell-aligned nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have nanoscale apexes (similar to1 nm) with high aspect ratios (similar to50), which were achieved by simultaneous SiC nanomask formation and dry etching during ECR plasma process. This technique was applied to a variety of substrates such as silicon, polycrystalline silicon, gallium nitride, gallium phosphide, sapphire, and aluminum, indicating its general applicability. High-resolutiontransmission electron microscopy and Auger depth profile analyses revealed that the SiC cap, with Si:C ratio of 1:1, exhibited 3C-SiC and 2H-SiC structure on Si and GaP, respectively, with heteroepitaxial relationship. This one-step self-masked dry etching technique enables the fabrication of uniform nanotip arrays on various substrates over large area at low process temperatures, thereby demonstrating a high potential for practical industrial application.en_US
dc.language.isoen_USen_US
dc.titleGenerally applicable self-masked dry etching technique for nanotip array fabricationen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl049925ten_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume4en_US
dc.citation.issue3en_US
dc.citation.spage471en_US
dc.citation.epage475en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000220170600017-
dc.citation.woscount91-
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