PMMA基材上奈米結構製作與抗反射光學性質之研究

Abstract

本論文利用電子迴旋共振氣相沉積系統，以自組裝乾蝕刻方式在矽晶圓上製備高深寬比的奈米針尖陣列結構，並且利用精密電鑄方式翻鑄成具有奈米針尖孔洞狀的鎳-鈷模具；接著透過熱壓成型方式成功的製作出不同深寬比的三維PMMA奈米針尖陣列，其結構的分佈是以非週期性的排列。 對於三維奈米針尖結構的特性分析實驗結果顯示，製作PMMA奈米針尖陣列週期寬度在100nm到150nm、長度分佈在480nm∼600nm、結構深寬比約在3.4∼4.0間有最佳的抗反射特性。在可見光波段（380nm∼760nm）反射率從4.3∼4.5 %降低至0.2∼0.5 %，而在紅外光波段（900nm∼2200nm）反射率從4.5 %降低至0.8 %∼1.5 %。隨著針尖長度的增加，反射率呈現明顯降低的趨勢，並且結構的深寬比愈大，所得到的反射率愈低。此單一層PMMA三維奈米針尖結構，能夠在光的寬頻譜波長範圍達到抗反射效果。

On the silicon wafer with high aspect-ratio nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma process using self-masked dry etching (SMDE) technique.The nickel-cobalt mold of nanostructure holes was made from silicon nanotips through the electroforming process.The nanostructures of 100 nm diameter holes were successfully obtained. Hot embossing process was proceeded by the nickel-cobalt mold.The different aspect-ratio 3D nanotip of non-periodic arrangement were fabricated for used to hot embossing technology. The analysis result showing the period width of 3D PMMA nanotip structures approximately 100 nm to 150 nm, with length 480nm to 600nm, structure aspect ratios nearly 3.4 to 4.0.The nanotip structures were characteristic of best antireflection.It was found that the reflectance of the PMMA nanotip arrays less than 0.2 ~ 0.5 % at wavelengths from 380 to 760 nm and the reflection rate 4.5 % reduces to 0.8 ~ 1.5 % at wavelengths from 900 to 2200 nm.Reflection rate reducing in pace with become long of nanotip length and high aspect ratios.At present relevant result show the 3D PMMA nanotip structures have excellent anti-reflection property in broad band wavelengths .