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dc.contributor.authorLo, M. H.en_US
dc.contributor.authorCheng, Y. -J.en_US
dc.contributor.authorHe, Y. N.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:39:33Z-
dc.date.available2014-12-08T15:39:33Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-5684-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/26998-
dc.description.abstractWe report the observation of optically pumped room temperature lasing action from GaN nanopillars. The lasing action occurs at threshold pumping power density of 122 MW/cm(2) with a linewidth of 0.38 nm at 363 nm.en_US
dc.language.isoen_USen_US
dc.titleObservation of Laser Action from Gallium Nitride nanorods under optical pumpingen_US
dc.typeArticleen_US
dc.identifier.journal22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCEen_US
dc.citation.spage99en_US
dc.citation.epage100en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287413100050-
Appears in Collections:Conferences Paper


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