Observation of Laser Action from Gallium Nitride nanorods under optical pumping

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lo, M. H.	en_US
dc.contributor.author	Cheng, Y. -J.	en_US
dc.contributor.author	He, Y. N.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.date.accessioned	2014-12-08T15:39:33Z	-
dc.date.available	2014-12-08T15:39:33Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-4244-5684-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26998	-
dc.description.abstract	We report the observation of optically pumped room temperature lasing action from GaN nanopillars. The lasing action occurs at threshold pumping power density of 122 MW/cm(2) with a linewidth of 0.38 nm at 363 nm.	en_US
dc.language.iso	en_US	en_US
dc.title	Observation of Laser Action from Gallium Nitride nanorods under optical pumping	en_US
dc.type	Article	en_US
dc.identifier.journal	22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE	en_US
dc.citation.spage	99	en_US
dc.citation.epage	100	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000287413100050	-
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