High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts

doi:10.1109/LED.2003.822656

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Lee, YJ	en_US
dc.contributor.author	Huang, TY	en_US
dc.date.accessioned	2014-12-08T15:39:39Z	-
dc.date.available	2014-12-08T15:39:39Z	-
dc.date.issued	2004-02-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2003.822656	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27075	-
dc.description.abstract	In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.	en_US
dc.language.iso	en_US	en_US
dc.subject	dynamic threshold voltage MOSFET (DTMOS)	en_US
dc.subject	Schottky substrate junction	en_US
dc.subject	temperature effect	en_US
dc.title	High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2003.822656	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	25	en_US
dc.citation.issue	2	en_US
dc.citation.spage	86	en_US
dc.citation.epage	88	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000188807300013	-
dc.citation.woscount	1	-
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