Full metadata record
DC FieldValueLanguage
dc.contributor.authorLiu, CYen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:39:49Z-
dc.date.available2014-12-08T15:39:49Z-
dc.date.issued2004en_US
dc.identifier.issn0272-8842en_US
dc.identifier.urihttp://hdl.handle.net/11536/27204-
dc.identifier.urihttp://dx.doi.org/10.1016/j.ceramint.2003.12.020en_US
dc.description.abstractSrTiO3 (STO) gate dielectrics were deposited on p-type silicon substrate by radio-frequency (rf) magnetron sputtering in an Ar-O-2 and Ar-N-2 mixed ambient to form metal/insulator/semiconductor (MIS) capacitor to investigate capacitance-voltage (C-V) and current-voltage (I-V) characteristics. Schottky emission and Fowler-Nordheim tunneling mechanisms were responsible for the leakage current of nitrogen-grown STO-based MIS capacitors at the low and high electric field under accumulation condition, respectively, while the generation current dominated the leakage mechanism under the inversion condition due to the highly leaky insulator and the lack of electrons. The depletion width under the inversion condition would broaden to generate more electrons to maintain the leakage current and lead to capacitance decreasing under higher bias voltage, which is called as deep depletion. Therefore, the deep depletion and leakage current saturation under inversion condition would occur at the same time. The correlation between the deep depletion and the leakage mechanism in STO-based gate dielectric capacitor under inversion condition was used to extract the generation lifetime of silicon substrate. The normalized C-V measurements at 1 kHz under illumination were also made to examine the results of extracted generation lifetime. The extracted generation lifetime could provide a simple method to judge the quality of silicon substrates. (C) 2004 Elsevier Ltd and Techna Group S.r.1. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectfilmsen_US
dc.subjectelectrical propertiesen_US
dc.subjectdielectric propertiesen_US
dc.subjectlifetimeen_US
dc.subjectcapacitorsen_US
dc.subjectSrTiO3en_US
dc.titleCorrelation between deep depletion and current-voltage saturation of SrTiO3 gate dielectric capacitoren_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.ceramint.2003.12.020en_US
dc.identifier.journalCERAMICS INTERNATIONALen_US
dc.citation.volume30en_US
dc.citation.issue7en_US
dc.citation.spage1101en_US
dc.citation.epage1106en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224168300007-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000224168300007.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.