標題: 1.0 nm oxynitride dielectrics prepared by RTP in mixtures of N-2 and O-2 ambient
作者: Chang, KM
Yang, WC
Chen, CF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: This work presents a reliable method of growing aggressively scaled, 1.0 nm thick, gate dielectric in mixtures of N-2 and O-2 ambient at 900degreesC for 15 s by rapid thermal processing (RTP). These oxynitride films have excellent interface properties, 100 times lower leakage current density, and better charge trapping properties than rapid thermal oxidation SiO2 of identical thickness prepared in pure O-2 ambient. The effect of interfacial nitrogen concentration on the device characteristics with gate oxynitride films grown in various N-2/O-2 gas flow ratios was also investigated. The results demonstrate that the uniform nitrogen content increases with the N-2/O-2 gas flow ratio and that high-quality oxynitride films can be obtained by RTP in an optimum gas flow ratio of N-2/O-2 = 5/1 (slm). (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/27262
http://dx.doi.org/10.1149/1.1703471
ISSN: 1099-0062
DOI: 10.1149/1.1703471
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 7
Issue: 6
起始頁: G119
結束頁: G121
顯示於類別:期刊論文