Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization

Abstract

Low-temperature poly-Si lateral double-diffused metal oxide semiconductor (LTPS LDMOS) with high voltage and very low on-resistance has been achieved using excimer laser crystallization at 400 degreesC substrate heating for the first time. The ON/OFF current ratios were 2.96 x 10(5) and 6.72 x 10(6) while operating at V-ds = 0.1 and 10 V, respectively. The maximum current limit was up to 10 mA and maximum power limit could be enhanced over 1 W at V-ds = 90 V and V-gs = 20 V. The R-on,R-sp with dimensions of W/L-ch = 600 mum/12 mum could be significantly decreased 6.67 x 10(2) times in magnitude as compared with conventional offset drain thin-film-transistors. (C) 2004 The Electrochemical Society.