標題: | Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization |
作者: | Cheng, HC Chang, FL Lin, MJ Tsai, CC Liaw, CW 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2004 |
摘要: | Low-temperature poly-Si lateral double-diffused metal oxide semiconductor (LTPS LDMOS) with high voltage and very low on-resistance has been achieved using excimer laser crystallization at 400 degreesC substrate heating for the first time. The ON/OFF current ratios were 2.96 x 10(5) and 6.72 x 10(6) while operating at V-ds = 0.1 and 10 V, respectively. The maximum current limit was up to 10 mA and maximum power limit could be enhanced over 1 W at V-ds = 90 V and V-gs = 20 V. The R-on,R-sp with dimensions of W/L-ch = 600 mum/12 mum could be significantly decreased 6.67 x 10(2) times in magnitude as compared with conventional offset drain thin-film-transistors. (C) 2004 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/27308 http://dx.doi.org/10.1149/1.1819771 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.1819771 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 151 |
Issue: | 12 |
起始頁: | G900 |
結束頁: | G903 |
顯示於類別: | 期刊論文 |