標題: Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization
作者: Cheng, HC
Chang, FL
Lin, MJ
Tsai, CC
Liaw, CW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: Low-temperature poly-Si lateral double-diffused metal oxide semiconductor (LTPS LDMOS) with high voltage and very low on-resistance has been achieved using excimer laser crystallization at 400 degreesC substrate heating for the first time. The ON/OFF current ratios were 2.96 x 10(5) and 6.72 x 10(6) while operating at V-ds = 0.1 and 10 V, respectively. The maximum current limit was up to 10 mA and maximum power limit could be enhanced over 1 W at V-ds = 90 V and V-gs = 20 V. The R-on,R-sp with dimensions of W/L-ch = 600 mum/12 mum could be significantly decreased 6.67 x 10(2) times in magnitude as compared with conventional offset drain thin-film-transistors. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/27308
http://dx.doi.org/10.1149/1.1819771
ISSN: 0013-4651
DOI: 10.1149/1.1819771
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 151
Issue: 12
起始頁: G900
結束頁: G903
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