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dc.contributor.authorLin, YCen_US
dc.contributor.authorWang, KQen_US
dc.contributor.authorWang, DPen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorHuang, TCen_US
dc.date.accessioned2014-12-08T15:40:00Z-
dc.date.available2014-12-08T15:40:00Z-
dc.date.issued2003-12-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1625098en_US
dc.identifier.urihttp://hdl.handle.net/11536/27327-
dc.description.abstractIt is known that electroreflectance of surface-intrinsic-n(+)-type-doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy- and light-hole transitions. However, each peak still contains two components, which belong to F+deltaF/2 and F-deltaF/2, respectively, where F is the electric-field strength in the undoped layer and deltaF is the modulating field of applied ac voltage (V-ac). In order to resolve the heavy- and light-hole transitions, deltaF was kept much smaller than F in the previous works. In this work, we have used a larger V-ac and, hence, a larger deltaF, to further separate the peaks. The peaks can be divided into two groups which belong to F+deltaF/2 and F-deltaF/2, respectively. The peak belonging to the heavy-hole transition and F-deltaF/2 can be singled out to compare with the Airy function theory. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleElectroreflectance of surface-intrinsic-n(+)-type-doped GaAs by using a large modulating fielden_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1625098en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume94en_US
dc.citation.issue11en_US
dc.citation.spage7210en_US
dc.citation.epage7214en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000186492600032-
dc.citation.woscount0-
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