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dc.contributor.authorShao, TLen_US
dc.contributor.authorLin, KCen_US
dc.contributor.authorChen, Cen_US
dc.date.accessioned2014-12-08T15:40:08Z-
dc.date.available2014-12-08T15:40:08Z-
dc.date.issued2003-11-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11536/27415-
dc.description.abstractThe electromigration-induced failure of Sn95/Sb5 flip chip solder bumps was investigated. The failure of the joints was found at the cathode/chip side after current stressing with a density of 1 X 10(4) A/cm(2) at 150degreesC for 13 sec. The growth of intermetallic compounds (IMCs) was observed at the anode side after current stressing. Voids were found near the current crowding area in the cathode/chip side, and the (Cu,Ni)(6)Sn-5 IMC at the cathode/chip end was transformed into the Sn phase. The failure mechanism for Sn95/Sb5 flip chip solder joint is proposed in this paper.en_US
dc.language.isoen_USen_US
dc.subjectelectromigrationen_US
dc.subjectlead-free solderen_US
dc.subjectSn95/Sb5en_US
dc.subjectflip chipen_US
dc.subjectfailureen_US
dc.subjectintermetallic compounden_US
dc.titleElectromigration studies of flip chip Sn95/Sb5 solder bumps on Cr/Cr-Cu/Cu under-bump metallizationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume32en_US
dc.citation.issue11en_US
dc.citation.spage1278en_US
dc.citation.epage1283en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000186990100023-
Appears in Collections:Conferences Paper


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