Electromigration studies of flip chip Sn95/Sb5 solder bumps on Cr/Cr-Cu/Cu under-bump metallization

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DC 欄位	值	語言
dc.contributor.author	Shao, TL	en_US
dc.contributor.author	Lin, KC	en_US
dc.contributor.author	Chen, C	en_US
dc.date.accessioned	2014-12-08T15:40:08Z	-
dc.date.available	2014-12-08T15:40:08Z	-
dc.date.issued	2003-11-01	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27415	-
dc.description.abstract	The electromigration-induced failure of Sn95/Sb5 flip chip solder bumps was investigated. The failure of the joints was found at the cathode/chip side after current stressing with a density of 1 X 10(4) A/cm(2) at 150degreesC for 13 sec. The growth of intermetallic compounds (IMCs) was observed at the anode side after current stressing. Voids were found near the current crowding area in the cathode/chip side, and the (Cu,Ni)(6)Sn-5 IMC at the cathode/chip end was transformed into the Sn phase. The failure mechanism for Sn95/Sb5 flip chip solder joint is proposed in this paper.	en_US
dc.language.iso	en_US	en_US
dc.subject	electromigration	en_US
dc.subject	lead-free solder	en_US
dc.subject	Sn95/Sb5	en_US
dc.subject	flip chip	en_US
dc.subject	failure	en_US
dc.subject	intermetallic compound	en_US
dc.title	Electromigration studies of flip chip Sn95/Sb5 solder bumps on Cr/Cr-Cu/Cu under-bump metallization	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.journal	JOURNAL OF ELECTRONIC MATERIALS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1278	en_US
dc.citation.epage	1283	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000186990100023	-
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