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dc.contributor.authorChao, TSen_US
dc.contributor.authorChang, THen_US
dc.date.accessioned2014-12-08T15:40:10Z-
dc.date.available2014-12-08T15:40:10Z-
dc.date.issued2003-11-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2003.818819en_US
dc.identifier.urihttp://hdl.handle.net/11536/27437-
dc.description.abstractThis brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q(BD)) and trapping rate. The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.en_US
dc.language.isoen_USen_US
dc.subjectinterpoly-oxideen_US
dc.subjectN2Oen_US
dc.subjectNH3en_US
dc.subjectnitridationen_US
dc.subjectnonvolatile memoryen_US
dc.subjecttunneling oxideen_US
dc.titleSimultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2003.818819en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume50en_US
dc.citation.issue11en_US
dc.citation.spage2300en_US
dc.citation.epage2302en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000186083800018-
dc.citation.woscount1-
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