Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation

doi:10.1109/TED.2003.818819

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DC 欄位	值	語言
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Chang, TH	en_US
dc.date.accessioned	2014-12-08T15:40:10Z	-
dc.date.available	2014-12-08T15:40:10Z	-
dc.date.issued	2003-11-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TED.2003.818819	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27437	-
dc.description.abstract	This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q(BD)) and trapping rate. The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.	en_US
dc.language.iso	en_US	en_US
dc.subject	interpoly-oxide	en_US
dc.subject	N2O	en_US
dc.subject	NH3	en_US
dc.subject	nitridation	en_US
dc.subject	nonvolatile memory	en_US
dc.subject	tunneling oxide	en_US
dc.title	Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TED.2003.818819	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	50	en_US
dc.citation.issue	11	en_US
dc.citation.spage	2300	en_US
dc.citation.epage	2302	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000186083800018	-
dc.citation.woscount	1	-
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