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dc.contributor.authorYang, MYen_US
dc.contributor.authorHuang, CHen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorCho, BJen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:40:17Z-
dc.date.available2014-12-08T15:40:17Z-
dc.date.issued2003-10-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2003.818532en_US
dc.identifier.urihttp://hdl.handle.net/11536/27501-
dc.description.abstractUsing high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.en_US
dc.language.isoen_USen_US
dc.subjectcapacitoren_US
dc.subjectdielectric constanten_US
dc.subjectfrequency dependenceen_US
dc.subjecthigh Ken_US
dc.subjectMIMen_US
dc.subjectRFen_US
dc.titleVery high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2003.818532en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume13en_US
dc.citation.issue10en_US
dc.citation.spage431en_US
dc.citation.epage433en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000185719300003-
dc.citation.woscount31-
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