1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorLIN, KCen_US
dc.contributor.authorHSIN, YMen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorCHANG, EYen_US
dc.date.accessioned2014-12-08T15:04:15Z-
dc.date.available2014-12-08T15:04:15Z-
dc.date.issued1993-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.249488en_US
dc.identifier.urihttp://hdl.handle.net/11536/2753-
dc.description.abstractA high band-gap GaInP epitaxial material was grown on InP to increase the Schottky barrier height of the InP MESFET. The Schottky gate materials used in this study were Au and Pt,Si. The pseudomorphic GaInP/InP MESFET with Au gate has a Schottky barrier height of 0.54 eV and the reverse leakage current of the device is 10(-2) times lower than the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET were 66.7 and 104.2 mS/mm respectively for the 5 mu m gate length GaInP/InP MESFET.en_US
dc.language.isoen_USen_US
dc.titleA PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCEen_US
dc.typeNoteen_US
dc.identifier.doi10.1109/16.249488en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume40en_US
dc.citation.issue12en_US
dc.citation.spage2361en_US
dc.citation.epage2362en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993MP36300030-
dc.citation.woscount3-
Appears in Collections:Articles


Files in This Item:

  1. A1993MP36300030.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...