A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE

doi:10.1109/16.249488

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIN, KC	en_US
dc.contributor.author	HSIN, YM	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHANG, EY	en_US
dc.date.accessioned	2014-12-08T15:04:15Z	-
dc.date.available	2014-12-08T15:04:15Z	-
dc.date.issued	1993-12-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.249488	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2753	-
dc.description.abstract	A high band-gap GaInP epitaxial material was grown on InP to increase the Schottky barrier height of the InP MESFET. The Schottky gate materials used in this study were Au and Pt,Si. The pseudomorphic GaInP/InP MESFET with Au gate has a Schottky barrier height of 0.54 eV and the reverse leakage current of the device is 10(-2) times lower than the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET were 66.7 and 104.2 mS/mm respectively for the 5 mu m gate length GaInP/InP MESFET.	en_US
dc.language.iso	en_US	en_US
dc.title	A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1109/16.249488	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	40	en_US
dc.citation.issue	12	en_US
dc.citation.spage	2361	en_US
dc.citation.epage	2362	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1993MP36300030	-
dc.citation.woscount	3	-
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