| 標題: | Wafer bonding by Ni-induced crystallization of amorphous silicon |
| 作者: | Chao, CP Wu, YCS Lee, TL Wang, YH 材料科學與工程學系 Department of Materials Science and Engineering |
| 關鍵字: | wafer bonding;amorphous silicon;metal-induced crystallization of amorphous silicon;nickel and electric field |
| 公開日期: | 1-Sep-2003 |
| 摘要: | Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC. |
| URI: | http://dx.doi.org/10.1143/JJAP.42.5527 http://hdl.handle.net/11536/27549 |
| ISSN: | 0021-4922 |
| DOI: | 10.1143/JJAP.42.5527 |
| 期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
| Volume: | 42 |
| Issue: | 9A |
| 起始頁: | 5527 |
| 結束頁: | 5530 |
| Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
- 以晶圓接合與金屬誘發使非晶矽薄膜結晶 / 詹俊彬;Chun-Ping Chao;吳耀銓;Yewchung Sermon Wu
- Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films / Huang, S. Y.;Lin, H. L.;Chao, C. G.;Liu, T. F.
- Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures / Lin, You-Da;Wu, Yewchung Sermon
- Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films / Lin, YD;Wu, YS;Chao, CW;Hu, GR
- Gettering of Ni from Nickel-Induced Lateral Crystallization Silicon Using Amorphous Silicon and Chemical Oxide / Wang, Bau-Ming;Wu, YewChung Sermon
Loading...