Wafer bonding by Ni-induced crystallization of amorphous silicon

標題:	Wafer bonding by Ni-induced crystallization of amorphous silicon
作者:	Chao, CP Wu, YCS Lee, TL Wang, YH 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	wafer bonding;amorphous silicon;metal-induced crystallization of amorphous silicon;nickel and electric field
公開日期:	1-九月-2003
摘要:	Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC.
URI:	http://dx.doi.org/10.1143/JJAP.42.5527 http://hdl.handle.net/11536/27549
ISSN:	0021-4922
DOI:	10.1143/JJAP.42.5527
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume:	42
Issue:	9A
起始頁:	5527
結束頁:	5530
顯示於類別：	期刊論文

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