標題: | The characterization of boron-doped carbon nanotube arrays |
作者: | Chen, CF Tsai, CL Lin, CL 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | nanotubes;p-type doping;chemical vapor deposition;field emission |
公開日期: | 1-Sep-2003 |
摘要: | In this study, we directly synthesized boron-doped carbon nanotubes (CNTs) by using trimethylborate (B(OCH3)(3)) as doping sources in a microwave plasma chemical vapor deposition system (MPCVD). Doping boron causes the growth rate of CNTs to decrease. This might be due to the high oxygen content contained in the doping source that induces oxidation of graphite. The bamboo-like nanostructure of the carbon tubes disappeared with boron doping. Raman spectrum shows the higher I-D/I-G ratio in boron-doped CNTs. This implies the decrease of graphitization in boron-doped CNTs. In addition, doping boron could enhance the field emission property by increasing the current density by more than 30% (from 350 to 470 mA/cm(2) at 2.2 V/mum). (C) 2003 Elsevier Science B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0925-9635(03)00181-X http://hdl.handle.net/11536/27590 |
ISSN: | 0925-9635 |
DOI: | 10.1016/S0925-9635(03)00181-X |
期刊: | DIAMOND AND RELATED MATERIALS |
Volume: | 12 |
Issue: | 9 |
起始頁: | 1500 |
結束頁: | 1504 |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.