Analysis and prevention on NC-ball induced ESD damages in a 683-pin BGA packaged chipset IC

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DC 欄位	值	語言
dc.contributor.author	Lo, WY	en_US
dc.contributor.author	Ker, MD	en_US
dc.date.accessioned	2014-12-08T15:40:26Z	-
dc.date.available	2014-12-08T15:40:26Z	-
dc.date.issued	2003-09-01	en_US
dc.identifier.issn	0026-2714	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0026-2714(03)00278-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27601	-
dc.description.abstract	An abnormal failure mechanism due to ESD zapping on the Non-Connected (NC) balls of a 683-pin BGA packaged chipset IC is presented. Failure analyses, including Scanning Electronic Microscopy (SEM) photographs and the measurement of current waveforms during ESD zapping, had been performed with a new proposed equivalent circuit to give clear explanation on this unusual phenomenon. Several methods to prevent such failure mechanism are also discussed. (C) 2003 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Analysis and prevention on NC-ball induced ESD damages in a 683-pin BGA packaged chipset IC	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0026-2714(03)00278-6	en_US
dc.identifier.journal	MICROELECTRONICS RELIABILITY	en_US
dc.citation.volume	43	en_US
dc.citation.issue	9-11	en_US
dc.citation.spage	1583	en_US
dc.citation.epage	1588	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000185791500039	-
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