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dc.contributor.authorShew, BYen_US
dc.contributor.authorHung, JTen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorLiu, KPen_US
dc.contributor.authorChou, CPen_US
dc.date.accessioned2014-12-08T15:40:27Z-
dc.date.available2014-12-08T15:40:27Z-
dc.date.issued2003-09-01en_US
dc.identifier.issn0960-1317en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0960-1317/13/5/324en_US
dc.identifier.urihttp://hdl.handle.net/11536/27625-
dc.description.abstractThis paper investigates the feasibility of using SU-8 as a high contrast x-ray resist. The SU-8 resist was irradiated with various x-ray doses and then developed for a fixed time. The developing rate was then measured and plotted versus absorbed x-ray dosage. The results revealed that SU-8 exhibited very high lithographic contrast other than elevated sensitivity. Therefore, a very thin mask absorber is required to switch the negative resist 'ON' or 'OFF'. Preliminary results showed that 1 mum wide, 17 mum thick SU-8 resists could be successfully patterned using an absorber of submicron thickness. Once the absorber thickness is effectively reduced to less than 1 mum, a high-resolution x-ray mask can be patterned simply by conventional UV lithography. An extra soft x-ray beamline was not required to increase the absorber's thickness in certain cases. The process of fabricating the membrane x-ray mask could thus be considerably simplified. X-ray micromachining may be an easy way to pattern high-resolution and high-aspect-ratio microstructures for optical and photonic applications.en_US
dc.language.isoen_USen_US
dc.titleHigh resolution x-ray micromachining using SU-8 resisten_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0960-1317/13/5/324en_US
dc.identifier.journalJOURNAL OF MICROMECHANICS AND MICROENGINEERINGen_US
dc.citation.volume13en_US
dc.citation.issue5en_US
dc.citation.spage708en_US
dc.citation.epage713en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000185656000024-
dc.citation.woscount11-
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