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dc.contributor.authorKidwai, Adil A.en_US
dc.contributor.authorFu, Chang-Tsungen_US
dc.contributor.authorJensen, Jonathan C.en_US
dc.contributor.authorTaylor, Stewart S.en_US
dc.date.accessioned2014-12-08T15:40:33Z-
dc.date.available2014-12-08T15:40:33Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2009.2015813en_US
dc.identifier.urihttp://hdl.handle.net/11536/27676-
dc.description.abstractA 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P(1dB) greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm(2) of die area.en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectT/R switchen_US
dc.subjecttransceiveren_US
dc.subjectwireless LANen_US
dc.titleA Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/JSSC.2009.2015813en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume44en_US
dc.citation.issue5en_US
dc.citation.spage1352en_US
dc.citation.epage1360en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000265936600004-
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