完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hu, GR | en_US |
dc.contributor.author | Huang, TJ | en_US |
dc.contributor.author | Wu, YS | en_US |
dc.date.accessioned | 2014-12-08T15:40:34Z | - |
dc.date.available | 2014-12-08T15:40:34Z | - |
dc.date.issued | 2003-08-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.42.L895 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27683 | - |
dc.description.abstract | Electroless Pd plating induced crystallization of amorphous silicon (a-Si) thin films has been proposed for fabricating low-temperature polycrystalline silicon thin film transistors (LTPS TFTs). However, the current crystallization process often leads to poor device performance due to the large amount of I'd-silicide residues in the poly-Si thin films. It was found that the amount of I'd silicide increased with annealing time and temperature. In this study, a two-step annealing process was developed to obtain the appropriate amount of Pd silicide for inducing the crystallization of a-Si. The device characteristics were significantly improved by this two-step process. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | thin-film transistor | en_US |
dc.subject | amorphous silicon | en_US |
dc.subject | polycrystalline silicon | en_US |
dc.subject | metal-induced crystallization | en_US |
dc.subject | electroless plating and physical vapor deposition | en_US |
dc.title | Improved annealing process for electroless Pd plating induced crystallization of amorphous silicon | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.42.L895 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 42 | en_US |
dc.citation.issue | 8A | en_US |
dc.citation.spage | L895 | en_US |
dc.citation.epage | L897 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000184782600006 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |