標題: Stability investigation of single-wafer process by using a spin etcher
作者: Kang, TK
Wang, CC
Tsui, BY
Yang, WL
Chien, FT
Yang, SY
Chang, CY
Li, YH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-2003
摘要: Etch rate instability was found in a spin etcher. When chemical was pumped to the spin etcher, the flow rate became unstable; possibly resulting in a chemical deficiency due to low mass transport at the wafer edge. Consequently, the etch rate and etch uniformity are unstable. The detailed etch mechanism has been investigated and the mass transport deficiency can be avoided. Less than 2% of etch nonuniformity and a stable process can be achieved by achieving a stable flow rate and control of the surface reaction over the whole wafer in spin etching. (C) 2003 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1574653
http://hdl.handle.net/11536/27764
ISSN: 1099-0062
DOI: 10.1149/1.1574653
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 6
Issue: 7
起始頁: G85
結束頁: G87
Appears in Collections:Articles