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dc.contributor.authorLin, YDen_US
dc.contributor.authorWu, YSen_US
dc.contributor.authorChao, CWen_US
dc.contributor.authorHu, GRen_US
dc.date.accessioned2014-12-08T15:40:44Z-
dc.date.available2014-12-08T15:40:44Z-
dc.date.issued2003-06-26en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(03)00108-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/27782-
dc.description.abstractEffects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4 h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process. (C) 2003 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectoxygenen_US
dc.subjectamorphous siliconen_US
dc.subjectmetal induced lateral crystallization (MILC)en_US
dc.subjectpolycrystalline siliconen_US
dc.subjectnickel and nickel oxideen_US
dc.titleEffects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0254-0584(03)00108-1en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume80en_US
dc.citation.issue3en_US
dc.citation.spage577en_US
dc.citation.epage580en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000182968500002-
dc.citation.woscount3-
Appears in Collections:Articles


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