Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

doi:10.1016/S0254-0584(03)00108-1

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, YD	en_US
dc.contributor.author	Wu, YS	en_US
dc.contributor.author	Chao, CW	en_US
dc.contributor.author	Hu, GR	en_US
dc.date.accessioned	2014-12-08T15:40:44Z	-
dc.date.available	2014-12-08T15:40:44Z	-
dc.date.issued	2003-06-26	en_US
dc.identifier.issn	0254-0584	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0254-0584(03)00108-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27782	-
dc.description.abstract	Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4 h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process. (C) 2003 Elsevier Science B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	oxygen	en_US
dc.subject	amorphous silicon	en_US
dc.subject	metal induced lateral crystallization (MILC)	en_US
dc.subject	polycrystalline silicon	en_US
dc.subject	nickel and nickel oxide	en_US
dc.title	Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/S0254-0584(03)00108-1	en_US
dc.identifier.journal	MATERIALS CHEMISTRY AND PHYSICS	en_US
dc.citation.volume	80	en_US
dc.citation.issue	3	en_US
dc.citation.spage	577	en_US
dc.citation.epage	580	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000182968500002	-
dc.citation.woscount	3	-
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