Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

標題:	Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films
作者:	Lin, YD Wu, YS Chao, CW Hu, GR 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	oxygen;amorphous silicon;metal induced lateral crystallization (MILC);polycrystalline silicon;nickel and nickel oxide
公開日期:	26-六月-2003
摘要:	Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4 h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process. (C) 2003 Elsevier Science B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/S0254-0584(03)00108-1 http://hdl.handle.net/11536/27782
ISSN:	0254-0584
DOI:	10.1016/S0254-0584(03)00108-1
期刊:	MATERIALS CHEMISTRY AND PHYSICS
Volume:	80
Issue:	3
起始頁:	577
結束頁:	580
顯示於類別：	期刊論文

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