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dc.contributor.authorTsui, BYen_US
dc.contributor.authorChang, HWen_US
dc.date.accessioned2014-12-08T15:40:45Z-
dc.date.available2014-12-08T15:40:45Z-
dc.date.issued2003-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1574594en_US
dc.identifier.urihttp://hdl.handle.net/11536/27788-
dc.description.abstractHafnium oxide is one of the most promising high dielectric constant materials to replace silicon dioxide as the gate dielectric. To take the advantages of high dielectric constant of HfO2 thoroughly, the relatively low dielectric constant interfacial layer must be controlled carefully. In this work, the formation of an interfacial SiO2 layer at the HfO2/Si interface was studied comprehensively. It is observed that during reactive sputtering deposition of the HfO2 layer, a very thick interfacial SiO2 layer, thicker than 3 nm, would be grown. O-radical signals, instead of O-2-radicl signals, are detected in the sputtering chamber. An O-radical enhanced oxidation model is proposed to explain such an unusual thick SiO2 layer. The adoption of a two-step deposition method, the thickness of interfacial SiO2 layer can be reduced only if the bottom Hf layer is thicker than 5 nm. However, the reduction of effective oxide thickness would be limited. Reoxidation of Hf film sounds a better choice. A 1.0-1.5-nm-thick interfacial SiO2 layer is still observed. This implies that the traced oxygen in the sputtering chamber plays a critical role on the formation of the interfacial layer. It is thus concluded that reactive sputtering is not a suitable method to prepare a HfO2 layer with a negligible interfacial SiO2 layer. Reoxidation of Hf film is a better choice, but the oxygen content in the sputtering chamber must be well controlled. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleFormation of interfacial layer during reactive sputtering of hafnium oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1574594en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume93en_US
dc.citation.issue12en_US
dc.citation.spage10119en_US
dc.citation.epage10124en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000183288900110-
dc.citation.woscount44-
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