標題: Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings
作者: Li, YM
Lu, HM
Voskoboynikov, O
Lee, CP
Sze, SM
交大名義發表
National Chiao Tung University
關鍵字: computer simulations;magnetic phenomena (cyclotron resonance, phase transitions, etc.);quantum effects;indium arsenide;gallium arsenide;heterojunctions
公開日期: 10-Jun-2003
摘要: We study the electron and hole energy states for a complete three-dimensional (3D) model of semiconductor nanoscale quantum rings in an external magnetic field. In this study, the model formulation includes: (i) the position dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (ii) the position dependent effective mass Hamiltonian in parabolic approximation for holes, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. To solve this 3D non-linear problem, we apply the non-linear iterative method to obtain self-consistent solutions. We find a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields. The result is useful in describing magneto-optical properties of the nano-scale quantum rings. (C) 2003 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0039-6028(03)00171-7
http://hdl.handle.net/11536/27792
ISSN: 0039-6028
DOI: 10.1016/S0039-6028(03)00171-7
期刊: SURFACE SCIENCE
Volume: 532
Issue: 
起始頁: 811
結束頁: 815
Appears in Collections:Conferences Paper


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