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dc.contributor.authorKim, SJen_US
dc.contributor.authorCho, BJen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorYu, XFen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:40:49Z-
dc.date.available2014-12-08T15:40:49Z-
dc.date.issued2003-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2003.813381en_US
dc.identifier.urihttp://hdl.handle.net/11536/27826-
dc.description.abstractMetal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.en_US
dc.language.isoen_USen_US
dc.subjectcapacitance densityen_US
dc.subjectHfO2en_US
dc.subjectmetal-insulator-metal (MIM) capacitoren_US
dc.subjectsputteren_US
dc.subjectvoltage coefficient of capacitor (VCC)en_US
dc.titlePVD HfO2 for high-precision MIM capacitor applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2003.813381en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue6en_US
dc.citation.spage387en_US
dc.citation.epage389en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000184254700007-
dc.citation.woscount43-
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