PVD HfO2 for high-precision MIM capacitor applications

doi:10.1109/LED.2003.813381

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kim, SJ	en_US
dc.contributor.author	Cho, BJ	en_US
dc.contributor.author	Li, MF	en_US
dc.contributor.author	Yu, XF	en_US
dc.contributor.author	Zhu, CX	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Kwong, DL	en_US
dc.date.accessioned	2014-12-08T15:40:49Z	-
dc.date.available	2014-12-08T15:40:49Z	-
dc.date.issued	2003-06-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2003.813381	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27826	-
dc.description.abstract	Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.	en_US
dc.language.iso	en_US	en_US
dc.subject	capacitance density	en_US
dc.subject	HfO2	en_US
dc.subject	metal-insulator-metal (MIM) capacitor	en_US
dc.subject	sputter	en_US
dc.subject	voltage coefficient of capacitor (VCC)	en_US
dc.title	PVD HfO2 for high-precision MIM capacitor applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2003.813381	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	24	en_US
dc.citation.issue	6	en_US
dc.citation.spage	387	en_US
dc.citation.epage	389	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000184254700007	-
dc.citation.woscount	43	-
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