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dc.contributor.authorHuang, S. Y.en_US
dc.contributor.authorChiu, Y. C.en_US
dc.contributor.authorLiang, J. J.en_US
dc.contributor.authorLin, L. K.en_US
dc.contributor.authorTsai, T. C.en_US
dc.contributor.authorHsu, S. Y.en_US
dc.contributor.authorLee, S. F.en_US
dc.date.accessioned2014-12-08T15:40:49Z-
dc.date.available2014-12-08T15:40:49Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3073657en_US
dc.identifier.urihttp://hdl.handle.net/11536/27831-
dc.description.abstractWe quantitatively study the interface resistance in Ni/Nb multilayers fabricated by sputtering system. For a fixed Ni layer thickness in Ni/Nb/Ni trilayers, the superconducting temperature T(c) decreases with decreasing Nb thickness. By analyzing the data with the proximity effect, the critical thickness below which superconductivity vanished was deduced. From current perpendicular to plane (CPP) measurement interpreted with a one-band series-resistor model, we obtained the CPP resistivities of Nb and Ni and the unit area resistances of 4.2 +/- 0.2 and 1.5 +/- 0.4 f Omega m(2) for superconducting and normal Ni/ Nb interfaces. The transparency parameter is directly calculated in terms of interface resistance. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3073657]en_US
dc.language.isoen_USen_US
dc.titleAnalysis of the proximity effect and the interface transparency with perpendicular current in Ni/Nb systemen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1063/1.3073657en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume105en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000266633500680-
Appears in Collections:Conferences Paper


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