標題: Optical and Electrical Characterizations of ZnMnO Thin Films on c-Al(2)O(3)
作者: Lin, Hung-Ji
Lin, Der-Yuh
Wu, Jenq-Shinn
Yang, Chu-Shou
Chou, Wu-Ching
Lo, Wei-Hsuan
Wang, Jyh-Shyang
電子物理學系
Department of Electrophysics
公開日期: 1-Apr-2009
摘要: We have studied the manganese (Mn) composition dependence of the optical and electrical properties of ZnMnO thin films, which are grown on c-Al(2)O(3) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The lattice constant and grain size are estimated by Xray diffraction (XRD), and it is found that the lattice constant increases and the grain size decreases with increasing Mn composition. When more Mn is incorporated into the ZnMnO thin films, a blue shift of the absorption edges and photoluminescence emission peaks are observed. Hall measurement shows n-type conduction behavior for all the samples. The decrease in mobility might be related with the increase in the number of impurity scattering centers, and the decrease in the carrier concentration can be attributed to the carrier quenching effect induced by the deep-level defects. The ac electrical response of ZnMnO is studied by impedance spectroscopy (IS). The equivalent RC circuit and parameters of the grain and grain boundary are determined. (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.04C122
http://hdl.handle.net/11536/27898
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.04C122
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 48
Issue: 4
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Appears in Collections:Conferences Paper