標題: Inter- and intra-subband relaxation of hot electrons in GaAs/AlGaAs quantum wells
作者: Sun, KW
Huang, CL
Huang, GB
Lee, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: quantum wells;electron-phonon interactions;inelastic scattering;luminescence
公開日期: 1-May-2003
摘要: In this work, we have studied the inter- and intra-subband scattering of hot electrons in quantum wells using the hot electron-neutral acceptor luminescence technique. We have observed direct evidence of the emission of confined optical phonons by hot electrons excited slightly above the n = 2 subband in GaAs/Al0.37Ga0.63As quantum wells. Scattering rates of photoexcited electrons via inter- and intra-subband LO phonon emission were calculated based on the dielectric continuum model. We found that, for wide wells with the Al composition of our experiments, both the calculated and experimental results suggest that the scattering of the electrons is dominated by the confined LO phonon mode. In the calculations, scatterings among higher subbands are also dominated by the same type of phonon at well width of 10 nm. (C) 2003 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1098(03)00235-7
http://hdl.handle.net/11536/27929
ISSN: 0038-1098
DOI: 10.1016/S0038-1098(03)00235-7
期刊: SOLID STATE COMMUNICATIONS
Volume: 126
Issue: 9
起始頁: 519
結束頁: 522
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