Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)

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DC 欄位	值	語言
dc.contributor.author	Tsui, BY	en_US
dc.contributor.author	Huang, CF	en_US
dc.date.accessioned	2014-12-08T15:41:01Z	-
dc.date.available	2014-12-08T15:41:01Z	-
dc.date.issued	2003-05-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.1566966	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27945	-
dc.language.iso	en_US	en_US
dc.title	Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1149/1.1566966	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	150	en_US
dc.citation.issue	5	en_US
dc.citation.spage	L10	en_US
dc.citation.epage	L10	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000182184200072	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文

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