Novel vertical polysilicon thin-film transistor with excimer-laser annealing

Abstract

In this paper, we propose a novel self-alignment vertical thin-film transistor (VTFT) structure with excimer laser annealing (ELA). The ELA on source and drain decreases the process temperature, suppresses the lateral diffusion of dopants in short channel devices and increases the driving current. Furthermore, the VTFTs have high carrier mobility, compared to conventional polysilicon thin film transistors (TFTs).