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dc.contributor.authorHuang, CFen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorCheng, HHen_US
dc.contributor.authorYang, ZPen_US
dc.contributor.authorWang, SYen_US
dc.contributor.authorYeh, HDen_US
dc.contributor.authorChou, HTen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorHwang, GJen_US
dc.date.accessioned2014-12-08T15:41:10Z-
dc.date.available2014-12-08T15:41:10Z-
dc.date.issued2003-04-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1098(03)00100-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/28014-
dc.description.abstractMagnetic-field-induced phase transitions in the two-dimensional electron system in a AlGaAs/InGaAs/GaAs heterostructure are studied. Two kinds of magnetic-field-induced phase transitions, plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions, are observed in the integer quantum Hall effect regime at high magnetic fields. In the P-P transition, both the semicircle law and the universality of critical conductivities are broken and we do not observe the universal scaling. However, the P-P transition can still be mapped to the I-QH transition by the Landau-level addition transformation, and as the temperature decreases the critical points of these two transitions appear at the same temperature. Our observations indicate that the equivalence between P-P and I-QH transitions can be found by the suitable analysis even when some expected universal properties are invalid. (C) 2003 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectphase transitionsen_US
dc.subjectquantum Hall effecten_US
dc.subjectscalingen_US
dc.titleOn the equivalence between magnetic-field-induced phase transitions in the integer quantum Hall effecten_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1098(03)00100-5en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume126en_US
dc.citation.issue4en_US
dc.citation.spage197en_US
dc.citation.epage201en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182039400006-
dc.citation.woscount6-
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