Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huang, CF | en_US |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Cheng, HH | en_US |
| dc.contributor.author | Yang, ZP | en_US |
| dc.contributor.author | Wang, SY | en_US |
| dc.contributor.author | Yeh, HD | en_US |
| dc.contributor.author | Chou, HT | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Hwang, GJ | en_US |
| dc.date.accessioned | 2014-12-08T15:41:10Z | - |
| dc.date.available | 2014-12-08T15:41:10Z | - |
| dc.date.issued | 2003-04-01 | en_US |
| dc.identifier.issn | 0038-1098 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0038-1098(03)00100-5 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/28014 | - |
| dc.description.abstract | Magnetic-field-induced phase transitions in the two-dimensional electron system in a AlGaAs/InGaAs/GaAs heterostructure are studied. Two kinds of magnetic-field-induced phase transitions, plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions, are observed in the integer quantum Hall effect regime at high magnetic fields. In the P-P transition, both the semicircle law and the universality of critical conductivities are broken and we do not observe the universal scaling. However, the P-P transition can still be mapped to the I-QH transition by the Landau-level addition transformation, and as the temperature decreases the critical points of these two transitions appear at the same temperature. Our observations indicate that the equivalence between P-P and I-QH transitions can be found by the suitable analysis even when some expected universal properties are invalid. (C) 2003 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | phase transitions | en_US |
| dc.subject | quantum Hall effect | en_US |
| dc.subject | scaling | en_US |
| dc.title | On the equivalence between magnetic-field-induced phase transitions in the integer quantum Hall effect | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1016/S0038-1098(03)00100-5 | en_US |
| dc.identifier.journal | SOLID STATE COMMUNICATIONS | en_US |
| dc.citation.volume | 126 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 197 | en_US |
| dc.citation.epage | 201 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000182039400006 | - |
| dc.citation.woscount | 6 | - |
| Appears in Collections: | Articles | |
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