標題: A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories
作者: Yeh, CC
Fan, TH
Lu, TC
Wang, TH
Pan, S
Lu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: multilevel cell;soft-program;read disturbance;over-program;threshold voltage distribution;anode hot hole injection;charge separation technique
公開日期: 1-四月-2003
摘要: In floating gate flash memories, anode hot hole injection induced by the channel FN erase will result in tunnel oxide, degradation, severe read disturbance and an abnormally fast program. All of these issues are critical for multilevel cell (MLC) flash memory design, which requires precise threshold voltage placement, good data retentivity and programming controllability. In this paper, a novel soft-program scheme is proposed to narrow the threshold voltage distribution in the first level. Cycling-induced read disturbance and programming inaccuracy are also reduced. This technique is essential for the application of more-than-2-bit MLC, flash memories.
URI: http://dx.doi.org/10.1143/JJAP.42.2044
http://hdl.handle.net/11536/28017
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.2044
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 4B
起始頁: 2044
結束頁: 2049
顯示於類別:會議論文


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