標題: | A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories |
作者: | Yeh, CC Fan, TH Lu, TC Wang, TH Pan, S Lu, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | multilevel cell;soft-program;read disturbance;over-program;threshold voltage distribution;anode hot hole injection;charge separation technique |
公開日期: | 1-四月-2003 |
摘要: | In floating gate flash memories, anode hot hole injection induced by the channel FN erase will result in tunnel oxide, degradation, severe read disturbance and an abnormally fast program. All of these issues are critical for multilevel cell (MLC) flash memory design, which requires precise threshold voltage placement, good data retentivity and programming controllability. In this paper, a novel soft-program scheme is proposed to narrow the threshold voltage distribution in the first level. Cycling-induced read disturbance and programming inaccuracy are also reduced. This technique is essential for the application of more-than-2-bit MLC, flash memories. |
URI: | http://dx.doi.org/10.1143/JJAP.42.2044 http://hdl.handle.net/11536/28017 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.42.2044 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 42 |
Issue: | 4B |
起始頁: | 2044 |
結束頁: | 2049 |
顯示於類別: | 會議論文 |