雙位元儲存氮化矽快閃式記憶元件技術及可靠性(III)

標題:	雙位元儲存氮化矽快閃式記憶元件技術及可靠性(III) Dual-Bit Storage Nitride Trap Flash Memory Device Technology and Reliability(III)
作者:	汪大暉 WANG TAHUI 交通大學電子工程系
公開日期:	2005
官方說明文件#:	NSC94-2215-E009-004
URI:	http://hdl.handle.net/11536/90632 https://www.grb.gov.tw/search/planDetail?id=1143833&docId=219363
Appears in Collections:	Research Plans

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