| 標題: | 雙位元儲存氮化矽快閃式記憶元件技術及可靠性(I) Dual-Bit Storage Nitride Trap Flash Memory Device Technology and Reliability (I) |
| 作者: | 汪大暉 WANG TAHUI 國立交通大學電子工程學系 |
| 公開日期: | 2003 |
| 官方說明文件#: | NSC92-2215-E009-056 |
| URI: | http://hdl.handle.net/11536/91855 https://www.grb.gov.tw/search/planDetail?id=873527&docId=167352 |
| Appears in Collections: | Research Plans |
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- 雙位元儲存氮化矽快閃式記憶元件技術及可靠性(II) / 汪大暉;WANG TAHUI
- 雙位元儲存氮化矽快閃式記憶元件技術及可靠性(III) / 汪大暉;WANG TAHUI
- Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique / Gu, SH;Wang, TH;Lu, WP;Ting, WC;Ku, YHJ
- Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell / Liu, MY;Chang, YW;Zous, NK;Yang, I;Lu, TC
- A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications / Yeh, CC;Wang, TH;Tsai, WJ;Lu, TC;Chen, MS
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