標題: Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
作者: Sun, CL
Chen, SY
Yang, MY
Chin, A
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: PbTiO3;dielectric constant;thin films;capacitance-voltage
公開日期: 17-Feb-2003
摘要: Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(02)00199-2
http://hdl.handle.net/11536/28091
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(02)00199-2
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 78
Issue: 2
起始頁: 412
結束頁: 415
Appears in Collections:Articles


Files in This Item:

  1. 000179569300019.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.