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dc.contributor.authorLin, HCen_US
dc.contributor.authorWang, MFen_US
dc.contributor.authorHou, FJen_US
dc.contributor.authorLin, HNen_US
dc.contributor.authorLu, CYen_US
dc.contributor.authorLiu, JTen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:41:20Z-
dc.date.available2014-12-08T15:41:20Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2002.807717en_US
dc.identifier.urihttp://hdl.handle.net/11536/28123-
dc.description.abstractA simplified and improved Schottky-barrier metal-oxide-semiconductor device featuring a self-aligned offset channel length, PtSi Schottky junction, and reduced oxide thickness underneath the sub-gate was proposed and demonstrated. To alleviate the drawbacks related to the nonself-aligned offset channel length in the original version, a self-aligned offset channel length is achieved in, the new device by forming the silicide source/drain junction self-aligning to the sidewall spacers abutting the gate. This results in not only one mask count saving but also better device performance, as facilitated by, the reduced offset channel length of the self-aligned sidewall spacers. Moreover, the adoption of PtSi for the Schottky junction further improves the on-state current of p-channel operation, while a thinner oxide employed underneath the sub-gate effectively reduces the sub-gate bias needed to form the electrical junction to below 5 V. Significant improvement in on-current as well as leakage current reduction is achieved in the new improved device.en_US
dc.language.isoen_USen_US
dc.subjectambipolaren_US
dc.subjectSchottky barrieren_US
dc.subjectsilicon-on-insulator (SOI)en_US
dc.titleHigh-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2002.807717en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue2en_US
dc.citation.spage102en_US
dc.citation.epage104en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182516600017-
dc.citation.woscount23-
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