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dc.contributor.authorYu, XFen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorHu, Hen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorCho, BJen_US
dc.contributor.authorKwong, DLen_US
dc.contributor.authorFoo, PDen_US
dc.contributor.authorYu, MBen_US
dc.date.accessioned2014-12-08T15:41:21Z-
dc.date.available2014-12-08T15:41:21Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2002.808159en_US
dc.identifier.urihttp://hdl.handle.net/11536/28124-
dc.description.abstractMetal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness Of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/mum(2) and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 x 10-(8)A/cm(2) at room temperature at I V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.en_US
dc.language.isoen_USen_US
dc.subjectfrequency dependencyen_US
dc.subjecthigh capacitance densityen_US
dc.subjectmetal-insulator-metal (MIM) capacitoren_US
dc.subjectthin-film devicesen_US
dc.subjectvoltage coefficient of capacitance (VCC)en_US
dc.titleA high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2002.808159en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue2en_US
dc.citation.spage63en_US
dc.citation.epage65en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182516600004-
dc.citation.woscount101-
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