標題: | Room temperature two-terminal characteristics in silicon nanowires |
作者: | Hu, SF Wong, WZ Liu, SS Wu, YC Sung, CL Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | nanostructures;nanofabrications;tunnelling |
公開日期: | 1-二月-2003 |
摘要: | Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured, on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade. (C) 2003 Elsevier Science Ltd. All rights reserved |
URI: | http://dx.doi.org/10.1016/S0038-1098(02)00807-4 http://hdl.handle.net/11536/28136 |
ISSN: | 0038-1098 |
DOI: | 10.1016/S0038-1098(02)00807-4 |
期刊: | SOLID STATE COMMUNICATIONS |
Volume: | 125 |
Issue: | 6 |
起始頁: | 351 |
結束頁: | 354 |
顯示於類別: | 期刊論文 |