標題: Room temperature two-terminal characteristics in silicon nanowires
作者: Hu, SF
Wong, WZ
Liu, SS
Wu, YC
Sung, CL
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nanostructures;nanofabrications;tunnelling
公開日期: 1-二月-2003
摘要: Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured, on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade. (C) 2003 Elsevier Science Ltd. All rights reserved
URI: http://dx.doi.org/10.1016/S0038-1098(02)00807-4
http://hdl.handle.net/11536/28136
ISSN: 0038-1098
DOI: 10.1016/S0038-1098(02)00807-4
期刊: SOLID STATE COMMUNICATIONS
Volume: 125
Issue: 6
起始頁: 351
結束頁: 354
顯示於類別:期刊論文


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