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dc.contributor.authorMeng, CCen_US
dc.contributor.authorChiang, MHen_US
dc.contributor.authorWu, THen_US
dc.date.accessioned2014-12-08T15:41:23Z-
dc.date.available2014-12-08T15:41:23Z-
dc.date.issued2003-01-20en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.10699en_US
dc.identifier.urihttp://hdl.handle.net/11536/28158-
dc.description.abstractA 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc.en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectLNAen_US
dc.subjectMOSFET amplifieren_US
dc.titleA 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.10699en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.citation.volume36en_US
dc.citation.issue2en_US
dc.citation.spage136en_US
dc.citation.epage139en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000180147500022-
dc.citation.woscount0-
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